Bio

BIOSKETCH: Dr. Anhar Bhuiyan earned his Ph.D. from The Ohio State University (OSU) in 2023, focusing on the development of Metalorganic Chemical Vapor Deposition (MOCVD) of ultra-wide bandgap semiconductor materials such as Ga2O3 and (AlxGa1-x)2O3 thin films for next-generation high-power electronics and ultraviolet optoelectronic applications. Dr. Bhuiyan’s expertise lies in synthesizing and characterizing semiconductor materials with deep understanding of semiconductor device physics, designing and fabricating high-performance electronic and optoelectronic devices. The nature of his research is highly interdisciplinary, bridging electrical engineering, applied physics, and materials science. Throughout his Ph.D., Dr. Bhuiyan (co)authored over 90 scientific publications including journal articles, refereed conferences and patents. His work gained significant recognition, being featured as Editor’s Pick, Hot Paper and Featured Paper in renowned journals. Several of his research articles were selected as the ‘Most Cited Articles from 2020 and 2021’, ‘Most Read Editor’s pick in 2019’ and ‘Most Read Scilights from 2018-2019’. He was nominated for the ‘Exemplary Graduate Student Researcher’ in the College of Engineering at OSU and was awarded the ‘Presidential Fellowship Award’ – which is considered as the highest honor from the Graduate School. He is also a recipient of the ‘Best Student Presentation Award’ at the 63^rd Electronic Materials Conference (EMC) in 2021. Currently, he is serving as an Assistant Professor in the Department of Electrical and Computer Engineering at the University of Massachusetts Lowell, where he continues to push the boundaries of semiconductor materials and device research.