Bhuiyan Research Group

2025

Dec. 2025

Our paper in collaboration with Prof. Uttam Singisetti's group from Uni. at Buffalo, “Enhanced breakdown voltage in β-Ga₂O₃ Schottky diodes via fast neutron irradiation and electro-thermal annealing”, has been accepted for publication in Applied Physics Letters!
Congratulations to Stephen for passing his PhD Qualifying Exam! Well done!

Nov. 2025

Our article, "Low-pressure CVD grown Si-doped β-Ga₂O₃ films with promising electron mobilities and high growth rates", has been selected for inclusion in the 2025 Applied Physics Letters Rising Stars Collection. This highly selective collection features 30 notable APL papers by emerging investigators, representing less than 1 % of the journal’s total annual volume. Congrats to the team!
Our latest preprints are now available on arXiv:
- Enhanced Breakdown Voltage in β-Ga₂O₃ Schottky Barrier Diodes via Fast Neutron Irradiation and Electrothermal Annealing (link)
- High-Purity Diamond Integration on β-Ga₂O₃ via Microwave Plasma CVD for Enhanced Thermal Management (link)
Saleh and Ahmed presented their research at 2025 Northeast Power Electronics Symposium (NEPES-2025), hosted by UConn:
- “Radiation Impacts on β-Ga₂O₃ Devices” - Saleh Ahmed Khan
- “Low-Pressure CVD of β-Ga₂O₃ Films and Devices” - Ahmed Ibreljic

Oct. 2025

We welcome our new M.S. student, Owen Zhang, to the group!
Prof. Bhuiyan to present an invited talk on “Advancing High-Power Electronics with Ga₂O₃” at the 2025 Northeast Power Electronics Symposium (NEPES-2025), hosted by University of Connecticut.

Sep. 2025

Our paper, “Quasi-Vertical β-Ga₂O₃ Schottky Diodes on Sapphire Using All-LPCVD Growth and Plasma-Free Ga-Assisted Etching”, has been accepted for publication in APL Electronic Devices! (link)
Our recent NSF awards were covered in Semiconductor Today and UML News:
- UMass Lowell’s Anhar Bhuiyan wins two US NSF grants worth $797,000 for gallium oxide research (Semiconductor Today)
- Electrical Engineering Professor Wins Two National Science Foundation Grants (UML News)
We welcome Rojann and Thompson, our new Undergraduate Research Assistants, to the group!

Aug. 2025

Our paper, “Plasma Damage Free in situ etching of β-Ga₂O₃ using Solid Source Gallium in LPCVD System”, has been accepted for publication in Applied Physics Letters! (link)
Our group received its second NSF Grant! This collaborative project with University at Buffalo will support our mission to develop radiation-hardened and thermally managed Ga₂O₃ power devices.
A co-authored paper from Prof. Steven Ringel’s group (OSU) on “Deep level defects in MOCVD grown β-(Al_xGa_1-x)₂O₃” has been accepted for publication in Journal of Applied Physics! (link)
At the 8th U.S. Gallium Oxide Workshop (GOX 2025) in Salt Lake City (Utah), our group made two research presentations:
- Saleh delivered an oral presentation on “Si-Doped β-Ga₂O₃ Films Grown by LPCVD with Controlled Doping, Promising Mobility and High Growth Rates.”
- Ahmed presented a poster on our collaborative research with Prof. Stephen Lam’s group — “Low-Pressure CVD of Sn- and Ge-Doped β-Ga₂O₃: Tunable Doping, Promising Mobility, Schottky Diodes, and Insights from DFT.”

July 2025

Our Research Group received an NSF ERI Grant from Electronics, Photonics and Magnetic Devices (EPMD) program under ECCS Division!
Prof. Bhuiyan gave an invited talk on “Advancing Ultrawide-Bandgap Gallium Oxide Semiconductor for High-Power and Radiation-Hardened Electronics” at the IEEE National Aerospace and Electronics Conference (NAECON 2025), held in Dayton, Ohio.

May 2025

Prof. Bhuiyan has been awarded the Ralph E. Powe Junior Faculty Enhancement Award, sponsored by the Oak Ridge Associated Universities. News highlights in Semiconductor Today and UML News:
- UMass Lowell assistant professor Anhar Bhuiyan receives Ralph E. Powe Junior Faculty Enhancement Award (Semiconductor Today)
- Professor Wins Prestigious Award for Space Research (UML News)
Ahmed Ibreljic has been selected as a Draper Scholar in the prestigious and highly competitive Draper Scholar Program! Congratulations on this well-deserved achievement!
Dr. Bhuiyan presented an invited talk on “LPCVD Grown β-Ga₂O₃ and Radiation-Hardened Devices for Extreme Environment Power Applications” at the 247th ECS Meeting, Montréal, Canada.
Our editorial on the special issue, “Ultra-Wide Bandgap Semiconductor Materials, Processing, and Devices” is now online, published by Elsevier in Materials Science in Semiconductor Processing. Explore the full collection here: https://www.sciencedirect.com/special-issue/10MC5CRV1KS

April 2025

Our paper “Thermal Annealing and Radiation Effects on Structural and Electrical Properties of NbN/GaN Superconductor/Semiconductor Junction” has been accepted for publication in JVST A: Journal of Vacuum Science and Technology! (link)
A new paper, titled “Electrical and structural characterization of in-situ MOCVD Al₂O₃/β-Ga₂O₃ and Al₂O₃/β-(Al_xGa_1-x)₂O₃ MOSCAPs” has been accepted for publication in Journal of Applied Physics! (link)
Congratulations to Saleh and Ahmed for passing their PhD Qualifying Exams! Well done!

Mar. 2025

Congratulations to Stephen for successfully defending his M.S. thesis dissertation on “Developing Crystalline NbN Superconductors on GaN by Sputtering: Insights into Structure, Electrical Properties, Thermal, and Radiation Stability.” Well done, Stephen!
Dr. Bhuiyan’s PhD research article on MOCVD epitaxy of high Al composition (Al_xGa_1-x)₂O₃ has been recognized as one of the Top 10 Most-Cited Papers of 2023 in physica status solidi (RRL) – Rapid Research Letters.

Jan. 2025

Congratulations to Ahmed Ibreljic for being selected as the BostInno's 25 under 25 for 2024. His team, EduX, also won the Jack M. Wilson First to Market Award at the 2024 DifferenceMaker $50,000 Idea Challenge.

2024

Aug. 2024

Saleh presenting a poster at GOX 2024, The Ohio State University.

June 2024

Co-authored paper accepted for publication in Journal of Vacuum Science & Technology A, titled “High growth rate metal organic chemical vapor deposition grown Ga₂O₃ (010) Schottky diodes.”
Saleh and Stephen presented their research at EMC-2024 in College Park, Maryland.

Stephen presenting at EMC 2024, University of Maryland, College Park.

May 2024

Congratulations to Saleh and Stephen on having their abstracts accepted for presentation at 7th U.S. Workshop on Gallium Oxide (GOX 2024) at The Ohio State University (August 5-7, 2024):
- Radiation Resilience of β-Ga₂O₃ Schottky Barrier Diodes Under High Gamma Doses (collaborative work with Prof. Uttam Singisetti’s group at University at Buffalo); Oral Presentation.
- Polycrystalline Diamond Growth on (010) β-Ga₂O₃ for Scalable and Cost-Efficient Thermal Management; Poster Presentation.

Apr. 2024

Two Late News abstracts were selected for oral presentation at 66^th Electronic Materials Conference (EMC-2024) at the University of Maryland, College Park (June 26-28, 2024). Congratulations to Saleh and Stephen! Our group will deliver three oral presentations at this premier annual forum:
- (Late News) Systematic Investigation of Electrical Performance of β-Ga₂O₃ Schottky Barrier Diodes under High-Dose Gamma Irradiation (collaborative work with Prof. Uttam Singisetti’s group at University at Buffalo); Presenter: Saleh.
- (Late News) MPCVD Growth of Polycrystalline Diamond on (010) β-Ga₂O₃ for Thermal Management; Presenter: Saleh.
- Annealing Modulated Structural and Electrical Properties of Crystalline NbN Superconductor on GaN by Sputter Deposition; Presenter: Stephen.
An Ecopia HMS 5300 Temperature-Dependent Hall Effect Measurement System has been installed in our lab at Ball Hall 308. The tool is capable of measuring bulk/sheet carrier concentration, mobility, Hall coefficient, bulk resistivity, conductivity, and magnetoresistance over a temperature range from 350 K down to 80 K.

Mar. 2024

Our group's recent work on “Annealing Modulated Structural and Electrical Properties of Crystalline NbN Superconductor on GaN substrate by Sputter Deposition” has been accepted for oral presentation at EMC-2024. Congratulations, Stephen!
A Low-Pressure Chemical Vapor Deposition (LPCVD) system has been installed in our lab at Ball Hall 308 for epitaxial growth of Ga₂O₃ and related materials.
Co-authored paper published in Advanced Materials Interfaces titled “Microscopic and Spectroscopic Investigation of (AlxGa1-x)₂O₃ Films: Unraveling the Impact of Growth Orientation and Aluminum Content.” (link)

2023

Dec. 2023

Prof. Bhuiyan will present an invited talk on “Development of Single Crystal NbN Superconductor on Wide Bandgap GaN By Sputtering and Thermal Annealing” at the 245^th ECS Meeting in San Francisco, CA (May 26–30, 2024).
We welcome our new Ph.D. student Saleh Ahmed Khan to the group!

Nov. 2023

Prof. Bhuiyan is serving as Guest Editor for the special topic “Ultra-Wide Bandgap Semiconductor Materials, Processing, and Devices” in Materials Science in Semiconductor Processing (Elsevier). See the Call for Papers. Submission deadline: Aug 30, 2024.
Our group attended the 2023 MRS Fall Meeting and Exhibit in Boston, MA (Nov 26 – Dec 1, 2023).

Oct. 2023

A co-authored paper from Prof. Zhao (OSU) and Prof. Zetian Mi's group (UMich), “Tunable Bandgap and Si-Doping in N-Polar AlGaN on C-face 4H-SiC via Molecular Beam Epitaxy.” Accepted in Applied Physics Letters.

Sep. 2023

Our group welcomed its first graduate student, Stephen Margiotta — welcome aboard!
Our research group, the (Ultra)Wide Bandgap Semiconductor Research Laboratory, is off and running!
Prof. Bhuiyan joined UMass Lowell as a Tenure-Track Assistant Professor in Electrical and Computer Engineering.
A co-authored paper from Bhuiyan’s Ph.D. research at OSU “Electrical Characteristics of in situ Mg-doped β-Ga₂O₃ Current-Blocking Layer for Vertical Devices.” Accepted in Applied Physics Letters.

Aug. 2023

Prof. Bhuiyan presented his Ph.D. research “Pushing the Al composition limit up to 99% in MOCVD β-(Al_xGa_1-x)₂O₃ films using TMGa as Ga precursor” at the 6th GOX U.S. Gallium Oxide Workshop, Buffalo, NY (Aug 13–16, 2023) and was selected as a finalist for the Oral Presentation Award.
Co-authored paper from Bhuiyan's Ph.D. research work, “MOCVD Growth of Thick β-(Al)GaO Films with Fast Growth Rates.” Accepted in Crystal Growth & Design.

July 2023

Prof. Bhuiyan successfully defended his Ph.D. dissertation “Metalorganic Chemical Vapor Deposition of Ultrawide Bandgap (Al_xGa_1-x)₂O₃ for Next-Generation Power Electronics.” He accepted the offer to join UMass Lowell as Assistant Professor.
Bhuiyan's latest research work in Prof. Zhao’s group, “Al incorporation up to 99% in MOCVD grown monoclinic (AlxGa1-x)₂O₃ films using trimethylgallium.” Accepted in Physica Status Solidi (RRL) – Rapid Research Letters.

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