Bhuiyan Research Group

(Ultra)Wide Bandgap Semiconductor Research Laboratory

Welcome to (Ultra)Wide Bandgap Semiconductor Research Laboratory (Bhuiyan Lab) homepage at University of Massachusetts Lowell, led by Prof. Anhar Bhuiyan. Our lab is dedicated to synthesize, engineer and understand the semiconductor materials, heterostructure interfaces and devices with a particular focus on (ultra)wide bandgap semiconductors, such as Gallium Oxide, Diamond and III-Nitrides. We are interested in semiconductor device physics and specialized in the design and fabrication of novel devices for next generation of high-power and high-frequency electronic and optoelectronic applications.

Join us: Currently, there are PhD position openings in our group starting from Spring/Fall-2025. Prospective PhD students will have the opportunity to engage in the epitaxial growth and characterizations of novel oxide and nitride materials, TCAD modeling, simulation and fabrication of semiconductor devices for next generation high power electronic applications. Please email Prof. Bhuiyan at anhar_bhuiyan@uml.edu with CV, BS/MS unofficial transcripts, GRE and TOEFL/IELTS scores, indicating your academic background, prior research experience, and publications.

Undergraduate/MS Student Researchers: Undergraduate/MS students at UMass Lowell who are interested in electronic materials and device research are encouraged to reach out to Prof. Bhuiyan at anhar_bhuiyan@uml.edu to explore potential research opportunities.

Group News

Dec. 2024

Our paper, “Low-pressure CVD grown Si-doped β-Ga₂O₃ films with promising electron mobilities and high growth rates“, has been accepted for publication in Applied Physics Letters.

Nov. 2024

Our paper, titled “Radiation Resilience of β-Ga₂O₃ Schottky Barrier Diodes Under High Dose Gamma Radiation“, has been accepted for publication in Journal of Applied Physics. (link)

Aug. 2024

We welcome PhD student- Ahmed Ibreljic in the group!
Saleh presented two of his recent works: 1) radiation induced damages of Ga2O3 diodes and 2) thermal management of Ga2O3 by integrating nano-crystalline diamond in GOX-2024 at Columbus, Ohio.

June 2024

Co-authored paper accepted for publication in Journal of Vacuum Science & Technology A, titled “High growth rate metal organic chemical vapor deposition grown Ga2O3 (010) Schottky diodes“
Saleh and Stephen presented their research works in EMC-2024 at College Park, Maryland.

May 2024

Congratulations to Saleh and Stephen on having their abstracts accepted for presentation at 7th U.S. Workshop on Gallium Oxide (GOX 2024) at The Ohio State University (August 5-7, 2024):

[1] Radiation Resilience of β-Ga2O3 Schottky Barrier Diodes Under High Gamma Doses (Collaborative work with Prof. Uttam Singisetti’s group at University at Buffalo); (Oral Presentation)

[2] Polycrystalline Diamond Growth on (010) β-Ga2O3 for Scalable and Cost-Efficient Thermal Management; (Poster Presentation)

Apr. 2024

Two Late News abstracts have been selected for Oral Presentation at 66th Electronic Materials Conference (EMC-2024) at The University of Maryland, College Park (June 26-28, 2024). Congratulations to Saleh and Stephen! Our group will be delivering three oral presentations at this upcoming premier annual forum:

[1] (Late News) “Systematic Investigation of Electrical Performance of β-Ga2O3 Schottky Barrier Diodes under High-Dose Gamma Irradiation” (Collaborative work with Prof. Uttam Singisetti’s group at University at Buffalo); Presenter: Saleh

[2] (Late News) “MPCVD Growth of Polycrystalline Diamond on (010) β-Ga2O3 for Thermal Management”; Presenter: Saleh

[3] “Annealing Modulated Structural and Electrical Properties of Crystalline NbN Superconductor on GaN substrate by Sputter Deposition”; Presenter: Stephen
A Ecopia HMS 5300 Temperature Dependent Hall Effect Measurement System has been installed in our lab at Ball Hall 308. The tool is capable of measuring bulk/sheet carrier concentration, mobility, Hall coefficient, bulk resistivity, conductivity, and magnetoresistance over a temperature range spanning from 350K down to 80K.

Mar. 2024

Our group’s recent work on ‘Annealing Modulated Structural and Electrical Properties of Crystalline NbN Superconductor on GaN substrate by Sputter Deposition‘ has been accepted for Oral Presentation at EMC-2024 conference. Congratulations, Stephen!
A Low Pressure Chemical Vapor Deposition (LPCVD) system has been installed in our lab at Ball Hall 308 for epitaxial growth of Ga2O3 and other related materials.
Co-authored paper published in Advanced Materials Interfaces titled “Microscopic and Spectroscopic Investigation of (AlxGa1-x)2O3 Films: Unraveling the Impact of Growth Orientation and Aluminum Content” (link)

Dec. 2023

Prof. Bhuiyan will present an invited talk on “Development of Single Crystal NbN Superconductor on Wide Bandgap GaN By Sputtering and Thermal Annealing” at the 245^th ECS Meeting in San Francisco, CA on May 26-May 30, 2024.
Prof. Bhuiyan will be chairing a session “H01 – Wide-Bandgap Semiconductor Materials and Device-25” at this upcoming Meeting.
We welcome our new PhD student- Saleh Ahmed Khan in our group!

Nov. 2023

Prof. Bhuiyan is serving as a Guest Editor of the special topic titled “Ultra-Wide Bandgap Semiconductor Materials, Processing, and Devices” in Materials Science in Semiconductor Processing (Elsevier) journal. The details of the Special Issue can be found in: Call For Papers. The Paper Submission Deadline: August 30, 2024.
Our group attended 2023 MRS Fall Meeting and Exhibit in Boston, Massachusetts from Nov 26 – Dec. 1, 2023.

Oct. 2023

A collaborative paper resulting from Prof. Bhuiyan’s doctoral research in Prof. Zhao’s Group at OSU and collaboration with Prof. Zetian Mi’s group at the University of Michigan, Ann Arbor, titled “Tunable Bandgap and Si-Doping in N-Polar AlGaN on C-face 4H-SiC via Molecular Beam Epitaxy” was accepted to publish in Appl. Phys. Letts.

Sep. 2023

Our group has welcomed its first graduate student – Stephen Margiotta. Welcome aboard, Stephen!
Our research group, the (Ultra)Wide Bandgap Semiconductor Research Laboratory, is off and running!
Prof. Bhuiyan joined University of Massachusetts Lowell as a Tenure-Track Assistant Professor in the Department of Electrical and Computer Engineering.
A collaborative paper from Prof. Bhuiyan’s PhD research in Prof Zhao’s Group at OSU titled “Electrical Characteristics of in situ Mg-doped β-Ga2O3 Current-Blocking Layer for Vertical Devices” was accepted to publish in Appl. Phys. Letts.

Aug. 2023

Prof. Bhuiyan presented one of his PhD research works “Pushing the Al composition limit up to 99% in MOCVD β-(Al_xGa_1-x)₂O₃ films using TMGa as Ga precursor” at 6th GOX U.S. Gallium Oxide Workshop in Buffalo, New York, Aug. 13-16, 2023. Prof. Bhuiyan was selected as one of the finalists for the Oral Presentation Award.
One of the co-authored papers from Prof. Bhuiyan’s PhD work at OSU “MOCVD growth of thick β-(Al)GaO films with fast growth rates” was accepted to publish in Crystal Growth & Design

July 2023

Prof. Bhuiyan successfully defended his Ph.D. dissertation titled “ Metalorganic chemical vapor deposition of ultrawide bandgap (Al_xGa_1-x)₂O₃ for next generation power electronics” in The Ohio State University and accepted the offer to join UMass Lowell as a tenure-track Assistant Professor.
Prof Bhuiyan’s latest work in Prof Zhao’s Group in OSU on “Al incorporation up to 99% in MOCVD grown monoclinic (AlxGa1-x)2O3 films using trimethylgallium” was accepted to publish in Physica Status Solidi (RRL) – Rapid Research Letters.