Bhuiyan Research Group

• Our group’s recent work on ‘Annealing Modulated Structural and Electrical Properties of Crystalline NbN Superconductor on GaN substrate by Sputter Deposition‘ has been accepted for Oral Presentation at EMC-2024 conference. Congratulations, Stephen!
• A Low Pressure Chemical Vapor Deposition (LPCVD) system has been installed in our lab at Ball Hall 308 for epitaxial growth of Ga2O3 and other related materials.
• Co-authored paper published in Advanced Materials Interfaces titled “Microscopic and Spectroscopic Investigation of (AlxGa1-x)2O3 Films: Unraveling the Impact of Growth Orientation and Aluminum Content” (link)

Dec. 2023

• Prof. Bhuiyan will present an invited talk on “Development of Single Crystal NbN Superconductor on Wide Bandgap GaN By Sputtering and Thermal Annealing” at the 245^th ECS Meeting in San Francisco, CA on May 26-May 30, 2024. 
• Prof. Bhuiyan will be chairing a session “H01 – Wide-Bandgap Semiconductor Materials and Device-25” at this upcoming Meeting.
• We welcome our new PhD student- Saleh Ahmed Khan in our group! 

Nov. 2023

• Prof. Bhuiyan is serving as a Guest Editor of the special topic titled “Ultra-Wide Bandgap Semiconductor Materials, Processing, and Devices” in Materials Science in Semiconductor Processing (Elsevier) journal. The details of the Special Issue can be found in: Call For Papers. The Paper Submission Deadline: August 30, 2024.
• Our group attended 2023 MRS Fall Meeting and Exhibit in Boston, Massachusetts from Nov 26 – Dec. 1, 2023. 

Oct. 2023

• A collaborative paper resulting from Prof. Bhuiyan’s doctoral research in Prof. Zhao’s Group at OSU and collaboration with Prof. Zetian Mi’s group at the University of Michigan, Ann Arbor, titled  “Tunable Bandgap and Si-Doping in N-Polar AlGaN on C-face 4H-SiC via Molecular Beam Epitaxy” was accepted to publish in Appl. Phys. Letts.

Sep. 2023

• Our group has welcomed its first graduate student – Stephen Margiotta. Welcome aboard, Stephen! 
• Our research group, the (Ultra)Wide Bandgap Semiconductor Research Laboratory, is off and running!
• Prof. Bhuiyan joined University of Massachusetts Lowell as a Tenure-Track Assistant Professor in the Department of Electrical and Computer Engineering.
• A collaborative paper from Prof. Bhuiyan’s PhD research in Prof Zhao’s Group at OSU titled “Electrical Characteristics of in situ Mg-doped β-Ga2O3 Current-Blocking Layer for Vertical Devices” was accepted to publish in Appl. Phys. Letts.

Aug. 2023

• Prof. Bhuiyan presented one of his PhD research works “Pushing the Al composition limit up to 99% in MOCVD β-(Al_xGa_1-x)₂O₃ films using TMGa as Ga precursor” at 6th GOX U.S. Gallium Oxide Workshop in Buffalo, New York, Aug. 13-16, 2023. Prof. Bhuiyan was selected as one of the finalists for the Oral Presentation Award. 
• One of the co-authored papers from Prof. Bhuiyan’s PhD work at OSU “MOCVD growth of thick β-(Al)GaO films with fast growth rates” was accepted to publish in Crystal Growth & Design

July 2023

• Prof. Bhuiyan successfully defended his Ph.D. dissertation titled “ Metalorganic chemical vapor deposition of ultrawide bandgap (Al_xGa_1-x)₂O₃ for next generation power electronics” in The Ohio State University and accepted the offer to join UMass Lowell as a tenure-track Assistant Professor. 
• Prof Bhuiyan’s latest work in Prof Zhao’s Group in OSU on “Al incorporation up to 99% in MOCVD grown monoclinic (AlxGa1-x)2O3 films using trimethylgallium” was accepted to publish in Physica Status Solidi (RRL) – Rapid Research Letters.