Welcome to (Ultra)Wide Bandgap Semiconductor Research Laboratory (Bhuiyan Lab) homepage at University of Massachusetts Lowell, led by Prof. Anhar Bhuiyan. Our lab is dedicated to synthesize, engineer and understand the semiconductor materials, heterostructure interfaces and devices with a particular focus on (ultra)wide bandgap semiconductors, such as Gallium Oxide, Diamond and III-Nitrides. We are interested in semiconductor device physics and specialized in the design and fabrication of novel devices for next generation of high-power and high-frequency electronic and optoelectronic applications.
Join us: Currently, there is a fully funded PhD position opening in our group starting from Fall-2024. Prospective PhD student will have the opportunity to engage in the epitaxial growth and characterizations of novel oxide and nitride materials, TCAD modeling, simulation and fabrication of semiconductor devices for next generation high power electronic and ultraviolet optoelectronic applications. Please email Prof. Bhuiyan at anhar_bhuiyan@uml.edu with CV, BS/MS unofficial transcripts, GRE and TOEFL/IELTS scores, indicating your academic background, prior research experience, and publications.
Undergraduate Student Researchers: Undergraduate students at UMass Lowell who are interested in epitaxial growth of electronic materials and semiconductor device modeling research are encouraged to reach out to Prof. Bhuiyan at anhar_bhuiyan@uml.edu to explore potential research opportunities.