Our research focuses on wide and ultrawide bandgap (UWBG) semiconductors and heterostructures, with the goal of improving the performance and reliability of electronic and optoelectronic technologies. We pursue the synthesis, characterization, and engineering of materials, along with device physics, design, fabrication, and modeling, to enable advances in high-power, high-frequency, and ultraviolet applications. Our work also extends to understanding how these materials and devices operate under extreme environments, including high temperature, radiation, and nuclear conditions, where long-term resilience is critical. Below are some of the research domains which are of great interest to our research group.
Ultrawide Bandgap Materials Growth and Processing: We are developing new growth and processing methods for Ga₂O₃ and related UWBG semiconductors using CVD techniques. Our efforts include in-situ etching, selective area growth, and regrowth to achieve high-quality films and anisotropic structures. By engineering crystal quality, doping, interfaces, and defect populations, we create high quality materials for reliable performance under high power and extreme conditions.
Device Physics, Design, and Modeling: We design, fabricate, and study devices based on UWBG materials, guided by TCAD simulations and modeling that probe electric fields, carrier transport, breakdown phenomena, and thermal behavior. By linking materials growth to device functionality, we explore the fundamental physical limits of UWBG semiconductors and develop architectures optimized for high power and high frequency electronics.
Radiation and Nuclear Environment Electronics: A major thrust of our work is understanding and mitigating the effects of gamma rays, neutrons, protons, and heavy ions on UWBG semiconductors and devices. We study how radiation introduces and evolves defects, alters transport, and impacts device reliability. These insights directly inform the development of radiation-hardened materials and devices for nuclear energy systems, space electronics, and defense applications.
Thermal Management for Harsh Conditions: Heat is one of the most severe constraints on UWBG device performance. We are pursuing strategies that integrate polycrystalline diamond and other thermally conductive materials to lower thermal resistance and improve stability under high power operation. These efforts are critical for ensuring robust device performance in nuclear and aerospace environments, where cooling options are limited.
Superconductor–Semiconductor Heterostructures: We are exploring hybrid systems that integrate superconductors with wide and ultrawide bandgap semiconductors for cryogenic and quantum electronics. Our studies focus on the effects of radiation exposure and defect recovery in superconducting thin films, with the goal of establishing material platforms that can operate reliably in radiation-rich and nuclear environments.
