For the up-to-date publication list, please visit Prof. Bhuiyan’s Google Scholar page.
(Invited) A. Bhuiyan, Z. Feng, L. Meng, and H. Zhao, “Tutorial: Metalorganic Chemical Vapor Deposition of β-Ga2O3 thin films, alloys and heterostructures”, Journal of Applied Physics 133, 211103 (2023).
[P4] H. Zhao, A. Bhuiyan, L. Meng, Compositions comprising galium oxide doped with carbon, and methods of making and use thereof, Application Number: 63/358,634, WO2024010637A1 (2024) (link).
[P3] H. Zhao, A. Bhuiyan, L. Meng, Compositions, methods, and devices, Application Number: 63/398,959, WO2024054339A2 (2024) (link).
[P2] H. Zhao, A. Bhuiyan, Z. Feng, Deposition of single-phase beta-(AlxGa1-x)2O3 thin films with 0.28< =x<=0.7 on beta Ga2O3 (100) or (−201) substrates by chemical vapor deposition, Patent No. US 11,624,126 (Date of Patent: Apr 11, 2023) (link).
[P1] H. Zhao, A. Bhuiyan, L. Meng, Compositions comprising aluminum and/or gallium oxide on a miscut substrate, and methods of making and use thereof,
Year: 2024
[J42] S. Khan, S. Saha, U. Singisett, and A. Bhuiyan, “Radiation Resilience of β-Ga2O3 Schottky Barrier Diodes Under High Dose Gamma Radiation”, J. Appl. Phys. (accepted, Nov. 2024).
[J41] J. Sarker, A. Rauf, A. R. Nirjhar, H.-L. Huang, M. Zhu, A. Bhuiyan, L. Meng, H. Zhao, J. Hwang, S. Ahmed, and B. Mazumder, “Variation of microscopic structural chemistry and spectroscopic properties of (100), (-201) and (010) oriented (AlxGa1-x)2O3 films with low and high Al contents”, Adv. Mater. Interfaces, 2301016 (2024).
[J40] S. Saha, L. Meng, D. Su Yu, A. Bhuiyan, H. Zhao, and U. Singisetti, “High growth rate MOCVD grown Ga2O3 (010) Schottky diodes”, J. Vac. Sci. Technol. A 42, 042705 (2024).
Year: 2023
[J39] A. Bhuiyan, L. Meng, H.-L. Huang, C. Chae, J. Hwang, and H. Zhao, “Al Incorporation up to 99% in Metalorganic Chemical Vapor Deposition‐Grown Monoclinic (AlxGa1-x)2O3 Films Using Trimethylgallium”, Phys. Status Solidi RRL 2300224 (2023). doi: 10.1002/pssr.202300224
[J38] A. Bhuiyan, L. Meng, H.-L. Huang, J. Sarker, C. Chae, B. Mazumder, J. Hwang, and H. Zhao, “Metalorganic Chemical Vapor Deposition of β-(AlxGa1-x)2O3 thin films on (001) β-Ga2O3 substrates”, APL Materials 11, 041112 (2023).
[J37] S. Saha, L. Meng, A. Bhuiyan, A. Sharma, C. N. Saha, H. Zhao, and U. Singisett, “Electrical Characteristics of in situ Mg-doped β-Ga2O3 Current-Blocking Layer for Vertical Devices”, Appl. Phys. Lett. 123, 132105 (2023).
[J36] S. Mondal, D. Wang, A. Bhuiyan, M. Hu, M. Reddeppa, P. Wang, H. Zhao, and Z. Mi, “Tunable bandgap and Si-doping in N-polar AlGaN on C-face 4H-SiC via molecular beam epitaxy”, Appl. Phys. Lett. 123, 182106 (2023).
[J35] E. Kluth, A. Bhuiyan, L. Meng, J. Bläsing, H. Zhao, R. Goldhahn, and M. Feneberg, “Determination of anisotropic optical properties of MOCVD grown m-plane α-(AlxGa1-x)2O3 alloys”, Jpn. J. Appl. Phys. 62, 051001 (2023).
[J34] L. Meng, A. Bhuiyan, D. S. Yu, H.-L. Huang, J. Hwang, and H. Zhao, “MOCVD growth of thick β-(Al)GaO films with fast growth rates”, Crystal Growth & Design 23 (10), 7365-7373 (2023).
[J33] Z. Ren, H.-C. Huang, H. Lee, C. Chan, H. C Roberts, X. Wu, A. Waseem, A. Bhuiyan, H. Zhao, W. Zhu, and X. Li, “Temperature Dependent Characteristics of Lateral β-Ga2O3 Fin-MOSFETs by MacEtch”, Appl. Phys. Lett. 123, 043505 (2023).
[J32] J. F. McGlone, H. Ghadi, E. Cornuelle, A. Armstrong, G. Burns, Z. Feng, A. Bhuiyan, H. Zhao, A. R. Arehart, and S. A. Ringel, “Proton Radiation Effects on Electronic Defect States in High-Mobility MOCVD-Grown (010) β-Ga2O3”, J. Appl. Phys. 133, 045702 (2023).
Year: 2022
[J31] A. Bhuiyan, L. Meng, H.-L. Huang, J. Hwang, and H. Zhao, “MOCVD In-situ Growth of Al2O3 Dielectric on β-Ga2O3 and β-(AlxGa1-x)2O3 thin films”, J. Appl. Phys. 132, 165301 (2022).
[J30] A. Bhuiyan, Z. Feng, L. Meng, H.-L. Huang, J. Hwang, and H. Zhao, “MOCVD growth and band offsets of κ-phase Ga2O3 on sapphire, GaN, AlN and YSZ substrates”, J. Vac. Sci. Technol. A 40, 062704 (2022).
[J29] L. Meng, A. Bhuiyan, Z. Feng, H.-L. Huang, J. Hwang, and H. Zhao, “Metalorganic chemical vapor deposition of (100) β-Ga2O3 on on-axis Ga2O3 substrates”, J. Vac. Sci. Technol. A 40, 062706 (2022).
[J28] C. N. Saha, A. Vaidya, A. Bhuiyan, L. Meng, H. Zhao, and U. Singisetti “Highly Scaled β-Ga2O3 thin channel MOSFET with 5.12 MV/cm average breakdown field and enhanced RF performance” Appl. Phys. Lett. 122, 182106 (2023).
[J27] S. Sharma, L. Meng, A. Bhuiyan, Z. Feng, D. Eason, H. Zhao and U. Singisetti, “Vacuum annealed β-Ga2O3 recess channel MOSFETs with 8.56 kV Breakdown Voltage”, IEEE Trans Electron Devices 43(12), 2029 (2022).
[J26] (Editor’s Pick) H.-C. huang, Z. Ren, A. Bhuiyan, Z. Feng, Z. Yang, X. Luo, A. Huang, A. Green, K. Chabak, H. Zhao, and Xiuling Li, “β-Ga2O3 FinFETs with ultra-low hysteresis by Plasma-Free Metal-Assisted Chemical Etching” Appl. Phys. Lett. 121, 052102 (2022).
[J25] K. Zhang, C. Hu, A. Bhuiyan, M. Zhu, V. G. T. Vangipuram, M. R. Karim, B. H. D. Jayatunga, J. Hwang, K. Kash, and H. Zhao, “Pulsed-mode MOCVD growth of ZnSn(Ga)N2 and determination of the valence band offset with GaN” ACS Crys. Growth Des. 22, 5004 (2022).
[J24] L. Meng, Z. Feng, A. Bhuiyan, and H. Zhao, “High-Mobility MOCVD β-Ga2O3 Epitaxy with Fast Growth Rate Using Trimethylgallium” Cryst. Growth Des. 22(6), 3896 (2022).
[J23] A. Bhuiyan, Z. Feng, L. Meng, A. Fiedler, H.-L. Huang, A. T. Neal, E. Steinbrunner, S. Mou, J. Hwang, S. Rajan and H. Zhao, “Si doping in MOCVD grown (010) β-(AlxGa1−x)2O3 thin films” J. Appl. Phys.131, 145301 (2022).
[J22] S. Saha, L. Meng, Z. Feng, A. Bhuiyan, H. Zhao, and U. Singisetti, “Schottky diode characteristics on high-growth rate LPCVD β-Ga2O3 films on (010) and (001) Ga2O3 substrates” Appl. Phys. Lett. 120, 122106 (2022).
Year: 2021
[J21] A. Bhuiyan, Z. Feng, H. -L. Huang, L. Meng, J. Hwang, H. Zhao, “Band offsets at metalorganic chemical vapor deposited β-(AlxGa1−x)2O3/β-Ga2O3 interfaces – Crystalline orientation dependence” J. Vac. Sci. Technol. A 39, 063207 (2021).
[J20] A. Bhuiyan, Z. Feng, H. -L. Huang, L. Meng, J. Hwang, H. Zhao, “Metalorganic chemical vapor deposition of α-Ga2O3 and α-(AlxGa1−x)2O3 thin films on m-plane sapphire substrates”, APL Materials 9, 101109 (2021).
[J19] N. K. Kalarickal, A. Fiedler, S. Dhara, H.-L. Huang, A. Bhuiyan, M. W. Rahman, T. Kim, Z. Xia, Z. J. Eddine, A. Dheenan, M. Brenner, H. Zhao, J. Hwang, and S. Rajan, “Planar and three-dimensional damage-free etching of β-Ga2O3 using atomic gallium flux” Appl. Phys. Lett. 119, 123503 (2021).
[J18] (Invited Featured Paper) A. Bhuiyan, Z. Feng, L. Meng, H. Zhao, “MOCVD growth of (010) β-(AlxGa1−x)2O3 thin films” J. Mater. Res. 36, 4804 (2021).
[J17] (Featured Article) Y. Zheng, Z. Feng, A. Bhuiyan, L. Meng, S. Dhole, Q. Jia, H. Zhao, J.-H. Seo, “Large-Size Free-Standing Single-crystal β-Ga2O3 Membranes Fabricated by Hydrogen Implantation and Lift-Off” J. Mater. Chem. C 9, 6180 (2021); “2021 Journal of Materials Chemistry C HOT Papers”
[J16] A. Bhuiyan, S. Subrina, “Asymmetric Channel Junctionless Field-Effect Transistors: a MOS Structure Biosensor” Silicon 14, 2489 (2021).
[J15] (Featured Article) J. M. Johnson, H.-L. Huang, M. Wang, S. Mu, J. B. Varley, A. F. M. A. U. Bhuiyan, Z. Feng, N. K. Kalarickal, S. Rajan, H. Zhao, C. G. Van de Walle, and J. Hwang, “Atomic Scale Investigation of Aluminum Incorporation, Defects, and Phase Stability in β-(AlxGa1-x)2O3 Films” APL Materials 9, 051103 (2021).
Year: 2020
[J14] (Editor’s Pick) A. Bhuiyan, Z. Feng, J. M. Johnson, H. -L. Huang, J. Hwang, H. Zhao, “Band Offsets of (100) β-(AlxGa1−x)2O3/β-Ga2O3 Heterointerfaces Grown via MOCVD”, Appl. Phys. Lett. 117, 252105 (2020).
[J13] Z. Feng, A. F. M. A. U. Bhuiyan, N. K. Kalarickal, S. Rajan and H. Zhao, “Mg acceptor doping in MOCVD (010) β-Ga2O3” Appl. Phys. Lett. 117, 222106 (2020).
[J12] (Editor’s Pick) Hemant Ghadi, Joe F. McGlone, Zixuan Feng, A. Bhuiyan, Hongping Zhao, Aaron R. Arehart, and Steven A. Ringel, “Influence of growth temperature on defect states throughout the bandgap of MOCVD-grown β-Ga2O3” Appl. Phys. Lett. 117, 172106 (2020).
[J11] (Editor’s Pick) A. Bhuiyan, Z. Feng, J. M. Johnson, H.-L. Huang, J. Hwang, and H. Zhao, “MOCVD growth of β-phase (AlxGa1−x)2O3 on (-201) β-Ga2O3 substrates” Appl. Phys. Lett. 117, 142107 (2020).
[J10] J. Sarker, A. Bhuiyan, Z. Feng, H. Zhao, B. Mazumder, “Direct observation of site-specific dopant substitution in Si doped (AlxGa1-x)2O3 via Atom Probe Tomography”, J. Phys. D: Appl. Phys. 54 184001 (2021).
[J9] N. K. Kalarickal, Z. Feng, A. Bhuiyan, Z. Xia, J. Mcglone, W. Moore, A. R. Arehart, S. A. Ringel, H. Zhao, S. Rajan, Electrostatic Engineering Using Extreme Permittivity Materials for Ultra-Wide Bandgap Semiconductor Transistors, IEEE Trans Electron Devices 68 (1), 29 (2020).
[J8] A. Bhuiyan, Z. Feng, J. M. Johnson, H.-L. Huang, J. Hwang, and H. Zhao, “MOCVD epitaxy of ultra-wide bandgap β-(AlxGa1−x)2O3 with high-Al composition on (100) β-Ga2O3 substrates”, ACS Crys. Growth Des., 20, 6722 (2020).
[J7] A. Bhuiyan, Z. Feng, J. M. Johnson, H.-L. Huang, J. Sarker, M. Zhu, M. R. Karim, B. Mazumder, J. Hwang, and H. Zhao, “Response to Comment on “Phase Transformation in MOCVD Growth of (AlxGa1−x)2O3 Thin Films”, APL Materials, 8, 089102, (2020).
[J6] Z. Feng, A. Bhuiyan, Z. Xia, W. Moore, Z. Chen, J. F. McGlone, D. R. Daughton, A. R. Arehart, S. A. Ringel, S. Rajan, H. Zhao, “Probing charge transport and background doping in MOCVD grown (010) β-Ga2O3”, Phys. Status Solidi RRL, 14 (8), 2000145 (2020).
[J5] J. Sarker, S. Broderick, A. Bhuiyan, Z. Feng, H. Zhao, B. Mazumder, “A combined approach of Atom Probe Tomography and unsupervised machine learning to understand phase transformation in (AlxGa1-x)2O3”, Appl. Phys. Lett., 116, 152101 (2020).
[J4] A. Bhuiyan, Z. Feng, J. M. Johnson, H.-L. Huang, J. Sarker, M. Zhu, M. R. Karim, B. Mazumder, J. Hwang, and H. Zhao, “Phase Transformation in MOCVD Growth of (AlxGa1−x)2O3 Thin Films”, APL Materials, 8, 031104 (2020). ‘Most Cited Articles from 2020 and 2021‘ in APL Materials.
[J3] H. Ghadi, J. F. McGlone, C. M. Jackson, E. Farzana, Z. Feng, A. Bhuiyan, H. Zhao, A. R. Arehart, S. A. Ringel, “Full bandgap defect state characterization of β-Ga2O3 grown by metal organic chemical vapor deposition”, APL Materials, 8, 021111 (2020).
Year: 2019
[J2] (Editor’s Pick) A. Bhuiyan, Z. Feng, J. M. Johnson, Z. Chen, H. -L. Huang, J. Hwang, H. Zhao, “MOCVD epitaxy of β-(AlxGa1-x)2O3 thin films on (010) Ga2O3 substrates and N-type doping”, Appl. Phys. Lett., 115, 120602 (2019); “Most Read Editor’s Pick in 2019”
[J1] (Featured Article) Z. Feng, A. Bhuiyan, M. R. Karim, H. Zhao, “MOCVD homoepitaxy of Si-doped (010) β-Ga2O3 thin films with superior transport properties”, Appl. Phys. Lett., 114, 250601 (2019); Highlighted in ‘Scilight 2019’, “Most Read Scilights from 2018-2019”
Year: 2024
[C55] S. A. Khan, S. Saha, U. Singisetti and A. Bhuiyan, “Radiation Resilience of β-Ga2O3 Schottky Barrier Diodes Under High Gamma Doses” 7th United States Gallium Oxide Workshop (GOX-2024), August 2024. (Columbus, Ohio)
[C54] S. A. Khan, S. Margiotta, and A. Bhuiyan, “Polycrystalline Diamond Growth on (010) β-Ga2O3 for Scalable and Cost-Efficient Thermal Management” (Poster Presentation) 7th United States Gallium Oxide Workshop (GOX-2024), August 2024. (Columbus, Ohio)
[C53] (Invited) A. Bhuiyan, S. Margiotta, and S. A. Khan, “Development of Single Crystal NbN Superconductor on Wide Bandgap GaN By Sputtering and Thermal Annealing” 245th ECS Meeting in San Francisco, CA on May 26-May 30, 2024
[C52] S. Margiotta, S. A. Khan and A. Bhuiyan, “Annealing Modulated Structural and Electrical Properties of Crystalline NbN Superconductor on GaN substrate by Sputter Deposition” EMC, June 2024. (College Park, Maryland)
[C51] S. A. Khan, S. Saha, U. Singisetti and A. Bhuiyan, “Systematic Investigation of Electrical Performance of β-Ga2O3 Schottky Barrier Diodes under High-Dose Gamma Irradiation” EMC, June 2024. (College Park, Maryland)
[C50] S. A. Khan, S. Margiotta, and A. Bhuiyan, “MPCVD Growth of Polycrystalline Diamond on (010) β-Ga2O3 for Thermal Management” EMC, June 2024. (College Park, Maryland)
Year: 2023
[C49] (Best Oral Presentation Award Finalist) A. Bhuiyan, L. Meng, H.-L. Huang, C. Chae, J. Hwang, and H. Zhao, “Pushing the Al composition limit up to 99% in MOCVD β-(AlxGa1-x)2O3 films using TMGa as Ga precursor” 6th United States Gallium Oxide Workshop (GOX-2023), August 2023 (Buffalo, New York).
[C48] L. Meng, A. Bhuiyan, H. Zhao, “The role of Carbon and C-H neutralization in MOCVD β-Ga2O3 using TMGa as precursor” 6th United States Gallium Oxide Workshop (GOX-2023), August 2023 (Buffalo, New York).
[C47] K. Zhang, L. Meng, H.-L. Huang, J. Sarker, A. Bhuiyan, B. Mazumder, J. Hwang and H. Zhao, “Low-pressure chemical vapor deposition of ultrawide bandgap LiGa5O8 thin films”, 6th United States Gallium Oxide Workshop (GOX-2023), August 2023 (Buffalo, New York).
[C46] (Best Student Presentation Award) C. N. Saha, A. Vaidya, A. Bhuiyan, L. Meng, H. Zhao, and U. Singisetti “Highly Scaled β-Ga2O3 thin channel MOSFET with 5.12 MV/cm average breakdown field and enhanced RF performance” 6th United States Gallium Oxide Workshop (GOX-2023), August 2023 (Buffalo, New York).
[C45] Z. Ren, H.-C. Huang, H. Lee, C. Chan, H. C Roberts, X. Wu, A. Waseem, A. Bhuiyan, H. Zhao, W. Zhu, and X. Li, “Temperature Dependent Characteristics of Lateral β-Ga2O3 Fin-MOSFETs by MacEtch”, DRC-2023 (Santa Barbara, California).
Year: 2022
[C44] A. Bhuiyan, L. Meng, H.-L. Huang, J. Sarkar, M. Zhu, B. Mazumder, J. Hwang, and H. Zhao, “MOCVD epitaxial development of differently oriented β-(AlxGa1-x)2O3 films with fast growth rates and Al composition up to 63%” 4th International Workshop on Gallium Oxide and Related Materials- IWGO, October 2022 (Nagano, Japan).
[C43] H.-L Huang, C. Chae, A. Bhuiyan, L. Meng, H. Zhao, and J. Hwang, “Atomic Scale Investigation of ε-Ga2O3 Heteroepitaxy” IWGO-4, October 2022 (Nagano, Japan).
[C42] E. Kluth, A. Bhuiyan, H. Zhao, R. Goldhahn, M. Feneberg, “Anisotropic IR active phonon modes and first direct band-to-band transition in α-(AlxGa1-x)2O3 alloys grown by MOCVD”, IWGO-4, October 2022 (Nagano, Japan).
[C41] H. Zhao, A. Bhuiyan, Z. Feng, L. Meng, “MOCVD development of Ga2O3 and AlGaO thin films” 242nd ECS meeting (digital presentation), October 9-13, 2022, Atlanta, GA.
[C40] J. Sarker, A. Bhuiyan, Z. Feng, L. Meng, H. Zhao, Baishakhi Mazumder, “Microscopic and Spectroscopic Analysis of (100), (-201) and (010) (AlxGa1-x)2O3 Films Using Atom Probe Tomography” 5th U.S. Gallium Oxide Workshop (GOX 2022), August 2022. (Washington, D.C. area)
[C39] S. Saha, L. Meng, A. Bhuiyan, Z. Feng, H. Zhao, U. Singisetti, “Electrical Characteristics of in Situ Mg-Doped Ga2O3 Current Blocking Layer for Vertical Devices” GOX 2022, Aug. 2022. (Washington, D.C.)
[C38] A Sharma, Z. Feng, L. Meng, A. Bhuiyan, H. Zhao, U Singisetti, “Comparison of lateral field-plated MOSFETs with and without Mg-doped buffer layer in MOCVD grown β-Ga2O3”, DRC, June 2022. (Columbus, Ohio)
[C37] H.-C. Huang, Z. Ren, A. Bhuiyan, Z. Feng, Z. Yang, X. Luo, A. Q. Huang, H. Zhao, and Xiuling Li, “β-Ga2O3 FinFETs by MacEtch: high aspect ratio and ultra-low hysteresis”, DRC, June 2022. (Columbus, Ohio)
[C36] K. Zhang, C. Hu, A. Bhuiyan, M. Zhu, V. G. T. Vangipuram, M. R. Karim, B. H. Jayatunga, J. Hwang, K. Kash and H. Zhao, “Pulsed-Mode MOCVD Growth of ZnSn(Ga)N2 and Determination of the Valence Band Offset with GaN” EMC, June 2022. (Columbus, Ohio)
[C35] L. Meng, Z. Feng, A. Bhuiyan, H.-L Huang, J. Hwang and H. Zhao, H.-L. Huang, J. Hwang, and H. Zhao, “MOCVD Epitaxy of β-Ga2O3 Thin Films on (100) β-Ga2O3 Substrate” EMC, June 2022. (Columbus, Ohio)
[C34] A. Bhuiyan, Z. Feng, L. Meng, H.-L. Huang, J. Hwang, and H. Zhao, “MOCVD Development and Bandoffsets of ε-Ga2O3 on GaN, AlN, YSZ and c-Sapphire Substrates” EMC, June 2022. (Columbus, Ohio)
[C33] A. Bhuiyan, Z. Feng, L. Meng, A. Fiedler, H.-L. Huang, A. T. Neal, E. Steinbrunner, S. Mou, J. Hwang, S. Rajan and H. Zhao, “MOCVD growth of Si Doped (010) β-(AlxGa1-x)2O3 Films-Structural and Electrical Properties” EMC, June 2022. (Columbus, Ohio)
[C32] A. Bhuiyan, Z. Feng, H.-L. Huang, L. Meng, J. Hwang, and H. Zhao, “MOCVD Epitaxy of α-(AlxGa1-x)2O3 (x =0-100%) on m-Plane Sapphire Substrate”, Compound Semiconductor Week, June. 2022. (Ann arbor, Michigan)
[C31] A. Bhuiyan, L. Meng, Z. Feng, H.-L. Huang, J. Hwang, H. Zhao, “In Situ MOCVD Growth of Dielectric Al2O3 on β-(AlxGa1-x)2O3: Interfaces and Band Offsets”, 2022 MRS Spring Meeting, May. 2022. (Honolulu, Hawaii)
[C30] H. Zhao, A. Bhuiyan, L. Meng, Z. Feng, “Status of MOCVD Development of UWBG Ga2O3, AlGaO and Heterostructures”, 2022 MRS Spring Meeting, May. 2022. (Honolulu, Hawaii)
[C29] X. Li, H.-C. Huang, Z. Ren, A. Bhuiyan, Z. Feng, A. Green, K. Chabak, H. Zhao, “High Aspect Ratio β-Ga2O3 FinFETs with Near-Zero Hysteresis and Low On-Resistance by Matel-Assisted Chemical Etching”, 2022 MRS Spring Meeting, May. 2022. (Honolulu, Hawaii)
Year: 2021
[C28] A. Bhuiyan, Z. Feng, J. Johnson, H.-L. Huang, J. Hwang, and H. Zhao, “MOCVD Epitaxy of β-(AlxGa1−x)2O3 Films on (100) and (-201) β-Ga2O3 Substrates with Al Compositions up to 52%”, 2021 MRS Spring Meeting, Apr. 2021. (Virtual)
[C27] Z. Feng, A. Bhuiyan, N. Kalarickal, S. Rajan, and H. Zhao, “Mg Acceptor Doping in MOCVD (010) β-Ga2O3”, 2021 MRS Spring Meeting, Apr. 2021. (Virtual)
[C26] S. Ringel, H. J. Ghadi, J. McGlone, R. Adams, A. Arehart, Z. Feng, A. Bhuiyan, Y. Zhang, H. Zhao, Z. Xia, N. Kalarickal, S. Rajan, A. Senckowski, M. H. Wong, “Current Status of Deep Level Defects in β-Ga2O3”, 2021 MRS Spring Meeting, Apr. 2021. (Virtual)
[C25] J. Shi, A. Krishnan, A. Bhuiyan, Y. R. Koh, K. Huynh, A. Mauze, S. Mu, B. M Foley, H. Ahmad, T. Itoh, Y. Zhang, C. Yuan, S. Kim, W A. Doolittle, C. V. de Walle, J. S Speck, M. Goorsky, P. Hopkins, H. Zhao, and S. Graham, “Thermal Transport Across Al-(AlxGa1-x)2O3 and Al-Ga2O3 Interfaces” International Electronic Packaging Technical Conference and Exhibition, Oct. 2021.
[C24] H. Zhao, Y. Zhang, Z. Feng, A. Bhuiyan, L. Meng, K. Zhang, M. R. Karim, “Developments of Wbg GaN-on-GaN Vertical Power Devices & Uwbg Ga2O3, Algao, and Heterostructures”, ECS Meeting Abstracts Oct. 2021. (Virtual)
[C23] H. Ghadi, J. F McGlone, Z. Feng, A. Bhuiyan, Y. Zhang, H. Zhao, A. Armstrong, G. R Burns, G. Vizkelethy, E. Bielejec, A. R. Arehart, S. A Ringel, “Detailed investigation of MOCVD-grown [beta]-Ga2O3 through quantitative defect spectroscopies” Oxide-based Materials and Devices XII 11687, 116870T (2021)
[C22] H.-L. Huang, J. Johnson, C. Chae, A. Bhuiyan, Z. Feng, N. K. Kalarickal, S. Rajan, H. Zhao, and J. Hwang, “Point Defects and Alloy Incorporation in Ultrawide Bandgap β-(AlxGa1-x) 2O3 Films”, Microscopy and Microanalysis 27 (S1), 2140-2142 (2021).
[C21] N. K. Kalarickal, A. Dheenan, Z. Feng, A. Bhuiyan, A. Fiedler, J. F. Mcglone, S. Dhara, S. A. Ringel, H. Zhao, and S. Rajan, “Demonstration of MOCVD‐grown β-Ga2O3 MESFETs with Insulating Mg‐Doped Buffer Layers”, DRC, June 2021. (Virtual)
[C20] Z. Feng, A. Bhuiyan, L. Meng, and H. Zhao, “Expanding Growth Window for MOCVD β-Ga2O3”, EMC, June 2021. (Virtual)
[C19] (Best Student Presentation Award) A. Bhuiyan, Z. Feng, L. Meng, J. Johnson, H.-L Huang, J. Hwang and H. Zhao, “Orientation-Dependent Band Offsets at MOCVD Grown β-(AlxGa1–x)2O3/β-Ga2O3 Heterointerfaces” EMC, June 2021. (Virtual)
[C18] E. M. Cornuelle, H. J. Ghadi, J. F. McGlone, A. Bhuiyan, Z. Feng, H. Zhao, A. Arehart and S. A. Ringel, “Quantitative Defect Characterization of MOCVD Grown β-(Al,Ga)2O3 and Comparison with β-Ga2O3”, EMC, June 2021. (Virtual)
[C17] H.-L Huang, J Johnson, A. Bhuiyan, Z. Feng, N. K. Kalarickal, S. Rajan, H. Zhao and J. Hwang, “Atomic Scale Investigation of Aluminum Incorporation, Defects and Phase Stability in β-(AlxGa1-x)2O3 Films”, EMC, June 2021. (Virtual)
[C16] A. Fiedler, Z. Feng, A. Bhuiyan, N. K. Kalarickal, S. Dhara, A. Dheenan, H. Zhao and S. Rajan, “Growth and Characterization of Deep Acceptor Mg-Doped/N-Type β-Ga2O3 Junctions”, EMC, June 2021. (Virtual)
Year: 2020
[C15] H.-C. Huang, J. Michaels, C. Chan, A. Bhuiyan, Z. Feng, H. Zhao, and X. Li, “MacEtch of β-Ga2O3, SiC and GaN – Plasma-Damage-Free and High-Aspect-Ratio”, MRS Spring Meeting, Nov. 2020. (Virtual)
[C14] J. Sarker, A. Bhuiyan, Z. Feng, H. Zhao, B. Mazumder, “Data mining for structural and chemical evolution of (AlxGa1-x)2O3 using Atom Probe Tomography”, MRS Spring Meeting, Nov. 2020. (Virtual)
[C13] A. Bhuiyan, Z. Feng, J. M. Johnson, Z. Chen, H.-L. Huang, J. Hwang, H. Zhao, “MOCVD growth and characterizations of β-(AlxGa1−x)2O3 thin films and N-type doping”, MRS Spring Meeting, Nov. 2020. (Virtual)
[C12] Z. Feng, A. Bhuiyan, M. R. Karim, Y. Zhang, H. Zhao, “MOCVD Epitaxy of β-Ga2O3 Thin Films with Record Mobilities”, 2020 MRS Spring Meeting, Nov. 2020 (Virtual)
[C11] N. K. Kalarickal, Z. Feng, Z. Xia, A. Bhuiyan, W. Moore, J. F. McGlone, A. Arehart, S. A. Ringel, H. Zhao, S. Rajan, “β-Ga2O3/BaTiO3 MESFET with Power Figure of Merit of 376 MW/cm2”, EMC, June 2020. (Virtual)
[C10] H.-L. Huang, J. Johnson, A. Bhuiyan, Z. Feng, H. Zhao, J. Hwang; “Atomic Distribution of Al and Phase Transformation in β-(AlxGa1-x)2O3”, EMC, June 2020. (Virtual)
[C9] J. F. McGlone, H. J. Ghadi, Z. Feng, A. Bhuiyan, H. Zhao, A. Arehart, S. A. Ringel “Proton Radiation Effects on Electronic Defect States in High-Mobility MOCVD-Grown (010) β-Ga2O3”, EMC, June 2020. (Virtual)
[C8] H. J. Ghadi, J. F. McGlone, R. Adams, Z. Feng, A. Bhuiyan, H. Zhao, A. Arehart, S. A. Ringel, “Growth Temperature Dependence of Electronic Defect States in High-Mobility MOCVD-Grown (010) β-Ga2O3”, EMC, June 2020. (Virtual)
[C7] Z. Feng, A. Bhuiyan, Z. Xia, J. E. McGlone, D. R. Daughton, A. Arehart, S. A. Ringel, S. Rajan, H. Zhao, “Probing Charge Transport and Background Doping in MOCVD Grown (010) β-Ga2O3”, EMC, June 2020. (Virtual)
[C6] A. Bhuiyan, Z. Feng, J. Johnson, H.-L. Huang, J. Sarker, M. Zhu, M. R. Karim, B. Mazumder, J. Hwang, H. Zhao, “MOCVD Growth, Characterization and Phase Transformation of (AlxGa1−x)2O3 Thin Films”, EMC, June 2020. (Virtual)
[C5] J. Sarker, A. Bhuiyan, Z. Feng, H. Zhao, B. Mazumder, “Atom Probe Tomography Studies to Understand Dopant Interaction in Si-Doped (AlxGa1-x)2O3”, EMC, June 2020. (Virtual)
Year: 2019
[C4] Z. Xia, W. Moore, A. Bhuiyan, Z. Feng, C. Wang, H. Chandrasekar, A. Lee, N. Kalarickal, F. Yang, H. Zhao, S. Rajan, “Metal/BaTiO3/β-Ga2O3 Dielectric Heterojunction Diode with 5.7 MV/cm Breakdown Field”, IWGO, Columbus, OH, Aug. 2019.
[C3] (Best Paper Award) Z. Feng, A. Bhuiyan, M. Karim, H. Zhao, “MOCVD Epitaxy of Si-doped β-Ga2O3 Thin Films with Record High Electron Mobilities”, IWGO, Columbus, OH, Aug. 2019.
[C2] A. Bhuiyan, Z. Feng, Z. Chen, J. Johnson, H.-L. Huang, J. Hwang, H. Zhao, “MOCVD Growth of β-(AlxGa1−x)2O3 Thin Films on Ga2O3 Substrates”, IWGO 2019, Columbus, OH, Aug. 2019.
[C1] Y. Zhang, Z. Feng, A. Bhuiyan, M. Karim, H. Zhao, “High temperature LPCVD growth of β-Ga2O3 films”, IWGO 2019, Columbus, OH, Aug. 2019.