• (Invited) A. Bhuiyan, Z. Feng, L. Meng, H. Zhao, “Tutorial: Metalorganic Chemical Vapor Deposition of β-Ga₂O₃ thin films, alloys and heterostructures”, Journal of Applied Physics 133, 211103 (2023).

• [P4] H. Zhao, A. Bhuiyan, L. Meng, Compositions comprising gallium oxide doped with carbon, and methods of making and use thereof, Application Number: 63/358,634, WO2024010637A1 (2024).
• [P3] H. Zhao, A. Bhuiyan, L. Meng, Compositions, methods, and devices, Application Number: 63/398,959, WO2024054339A2 (2024).
• [P2] H. Zhao, A. Bhuiyan, Z. Feng, Deposition of single-phase β-(Al_xGa_1-x)₂O₃ thin films with 0.28 ≤ x ≤ 0.7 on β-Ga₂O₃ (100) or (−201) substrates by chemical vapor deposition, US Patent No. 11,624,126 (Date of Patent: Apr 11, 2023).
• [P1] H. Zhao, A. Bhuiyan, L. Meng, Compositions comprising aluminum and/or gallium oxide on a miscut substrate, and methods of making and use thereof, WO 2024/129581 A1 (2024).

• [J50] S. A. Khan, S. Margiotta, A. Ibreljic, A. Bhuiyan, High-Purity Diamond Integration on β-Ga₂O₃ via Microwave Plasma CVD for Enhanced Thermal Management, under review (2025).
  arXiv:2511.08758
• [J49] S. A. Khan, S. Saha, A. Ibreljic, S. Margiotta, J. Liu, W. Amir, S. Chakraborty, U. Singisetti, A. Bhuiyan, Enhanced Breakdown Voltage in β-Ga₂O₃ Schottky Barrier Diodes via Fast Neutron Irradiation and Electrothermal Annealing, under review (2025).
  arXiv:2510.06415
• [J48] S. A. Khan, A. Ibreljic, A. Bhuiyan, “Quasi-Vertical β-Ga₂O₃ Schottky Diodes on Sapphire Using All-LPCVD Growth and Plasma-Free Ga-Assisted Etching”, APL Electronic Devices 1, 036125 (2025).
• [J47] S. A. Khan, A. Ibreljic, A. Bhuiyan, “Plasma Damage Free in situ etching of β-Ga₂O₃ using Solid Source Gallium in LPCVD System”, Applied Physics Letters 127, 102105 (2025).
• [J46] Q. Shuai, H. Ghadi, E. Cornuelle, J. McGlone, A. Bhuiyan, H. Zhao, A. Arehart, S. Ringel, “Deep level defects in MOCVD grown β-(Al_xGa_1-x)₂O₃”, Journal of Applied Physics 138, 095704 (2025).
• [J45] S. Margiotta, B. Liu, S. A. Khan, G. C. Ortiz, A. Ibreljic, J. Hwang, A. Bhuiyan, “Thermal Annealing and Radiation Effects on Structural and Electrical Properties of NbN/GaN Superconductor/Semiconductor Junctions”, Journal of Vacuum Science & Technology A 43, 042701 (2025).
• [J44] (Selected for “2025 APL Rising Stars Collection”) S. A. Khan, A. Ibreljic, S. Margiotta, A. Bhuiyan, “Low-pressure CVD grown Si-doped β-Ga₂O₃ films with promising electron mobilities and high growth rates”, Applied Physics Letters 126, 012103 (2025).
• [J43] A. Bhuiyan, L. Meng, D. S. Yu, S. Dhara, H.-L. Huang, V. G. T. Vangipuram, J. Hwang, S. Rajan, H. Zhao, “Electrical and Structural Properties of In-Situ MOCVD Grown Al₂O₃/Ga₂O₃ and Al₂O₃/(Al_xGa_1-x)₂O₃ MOSCAPs”, Journal of Applied Physics 137, 174101 (2025).

• [J42] S. A. Khan, S. Saha, U. Singisetti, A. Bhuiyan, “Radiation Resilience of β-Ga₂O₃ Schottky Barrier Diodes Under High Dose Gamma Radiation”, Journal of Applied Physics 136, 225701 (2024).
• [J41] J. Sarker, A. Rauf, A. R. Nirjhar, H.-L. Huang, M. Zhu, A. Bhuiyan, L. Meng, H. Zhao, J. Hwang, S. Ahmed, B. Mazumder, “Variation of microscopic structural chemistry and spectroscopic properties of (100), (−201) and (010) oriented (Al_xGa_1-x)₂O₃ films with low and high Al contents”, Advanced Materials Interfaces 2301016 (2024).
• [J40] S. Saha, L. Meng, D. Su Yu, A. Bhuiyan, H. Zhao, U. Singisetti, “High growth rate MOCVD grown Ga₂O₃ (010) Schottky diodes”, Journal of Vacuum Science & Technology A 42, 042705 (2024).

• [J39] A. Bhuiyan, L. Meng, H.-L. Huang, C. Chae, J. Hwang, H. Zhao, “Al Incorporation up to 99% in Metalorganic Chemical Vapor Deposition-Grown Monoclinic (Al_xGa_1-x)₂O₃ Films Using Trimethylgallium”, Physica Status Solidi RRL 2300224 (2023). doi: 10.1002/pssr.202300224
• [J38] A. Bhuiyan, L. Meng, H.-L. Huang, J. Sarker, C. Chae, B. Mazumder, J. Hwang, H. Zhao, “Metalorganic Chemical Vapor Deposition of β-(Al_xGa_1-x)₂O₃ thin films on (001) β-Ga₂O₃ substrates”, APL Materials 11, 041112 (2023).
• [J37] S. S. Saha, L. Meng, A. Bhuiyan, A. Sharma, C. N. Saha, H. Zhao, U. Singisetti, “Electrical Characteristics of in situ Mg-doped β-Ga₂O₃ Current-Blocking Layer for Vertical Devices”, Applied Physics Letters 123, 132105 (2023).
• [J36] S. Mondal, D. Wang, A. Bhuiyan, M. Hu, M. Reddeppa, P. Wang, H. Zhao, Z. Mi, “Tunable bandgap and Si-doping in N-polar AlGaN on C-face 4H-SiC via molecular beam epitaxy”, Applied Physics Letters 123, 182106 (2023).
• [J35] E. Kluth, A. Bhuiyan, L. Meng, J. Bläsing, H. Zhao, R. Goldhahn, M. Feneberg, “Determination of anisotropic optical properties of MOCVD grown m-plane α-(Al_xGa_1-x)₂O₃ alloys”, Japanese Journal of Applied Physics 62, 051001 (2023).
• [J34] L. Meng, A. Bhuiyan, D. S. Yu, H.-L. Huang, J. Hwang, H. Zhao, “MOCVD growth of thick β-(Al)GaO films with fast growth rates”, Crystal Growth & Design 23 (10), 7365–7373 (2023).
• [J33] Z. Ren, H.-C. Huang, H. Lee, C. Chan, H. C. Roberts, X. Wu, A. Waseem, A. Bhuiyan, H. Zhao, W. Zhu, X. Li, “Temperature Dependent Characteristics of Lateral β-Ga₂O₃ Fin-MOSFETs by MacEtch”, Applied Physics Letters 123, 043505 (2023).
• [J32] J. F. McGlone, H. Ghadi, E. Cornuelle, A. Armstrong, G. Burns, Z. Feng, A. Bhuiyan, H. Zhao, A. R. Arehart, S. A. Ringel, “Proton Radiation Effects on Electronic Defect States in High-Mobility MOCVD-Grown (010) β-Ga₂O₃”, Journal of Applied Physics 133, 045702 (2023).

• [J31] A. Bhuiyan, L. Meng, H.-L. Huang, J. Hwang, H. Zhao, “MOCVD In-situ Growth of Al₂O₃ Dielectric on β-Ga₂O₃ and β-(Al_xGa_1-x)₂O₃ thin films”, Journal of Applied Physics 132, 165301 (2022).
• [J30] A. Bhuiyan, Z. Feng, L. Meng, H.-L. Huang, J. Hwang, H. Zhao, “MOCVD growth and band offsets of κ-phase Ga₂O₃ on sapphire, GaN, AlN and YSZ substrates”, Journal of Vacuum Science & Technology A 40, 062704 (2022).
• [J29] L. Meng, A. Bhuiyan, Z. Feng, H.-L. Huang, J. Hwang, H. Zhao, “Metalorganic chemical vapor deposition of (100) β-Ga₂O₃ on on-axis Ga₂O₃ substrates”, Journal of Vacuum Science & Technology A 40, 062706 (2022).
• [J28] C. N. Saha, A. Vaidya, A. Bhuiyan, L. Meng, H. Zhao, U. Singisetti, “Highly Scaled β-Ga₂O₃ thin channel MOSFET with 5.12 MV/cm average breakdown field and enhanced RF performance”, Applied Physics Letters 122, 182106 (2022).
• [J27] S. Sharma, L. Meng, A. Bhuiyan, Z. Feng, D. Eason, H. Zhao, U. Singisetti, “Vacuum annealed β-Ga₂O₃ recess channel MOSFETs with 8.56 kV Breakdown Voltage”, IEEE Transactions on Electron Devices 43(12), 2029 (2022).
• [J26] (Editor’s Pick) H.-C. Huang, Z. Ren, A. Bhuiyan, Z. Feng, Z. Yang, X. Luo, A. Huang, A. Green, K. Chabak, H. Zhao, Xiuling Li, “β-Ga₂O₃ FinFETs with ultra-low hysteresis by Plasma-Free Metal-Assisted Chemical Etching”, Applied Physics Letters 121, 052102 (2022).
• [J25] K. Zhang, C. Hu, A. Bhuiyan, M. Zhu, V. G. T. Vangipuram, M. R. Karim, B. H. Jayatunga, J. Hwang, K. Kash, H. Zhao, “Pulsed-mode MOCVD growth of ZnSn(Ga)N₂ and determination of the valence band offset with GaN”, Crystal Growth & Design 22, 5004 (2022).
• [J24] L. Meng, Z. Feng, A. Bhuiyan, H. Zhao, “High-Mobility MOCVD β-Ga₂O₃ Epitaxy with Fast Growth Rate Using Trimethylgallium”, Crystal Growth & Design 22(6), 3896 (2022).
• [J23] A. Bhuiyan, Z. Feng, L. Meng, A. Fiedler, H.-L. Huang, A. T. Neal, E. Steinbrunner, S. Mou, J. Hwang, S. Rajan, H. Zhao, “Si doping in MOCVD grown (010) β-(Al_xGa_1−x)₂O₃ thin films”, Journal of Applied Physics 131, 145301 (2022).
• [J22] S. Saha, L. Meng, Z. Feng, A. Bhuiyan, H. Zhao, U. Singisetti, “Schottky diode characteristics on high-growth rate LPCVD β-Ga₂O₃ films on (010) and (001) Ga₂O₃ substrates”, Applied Physics Letters 120, 122106 (2022).

• [J21] A. Bhuiyan, Z. Feng, H.-L. Huang, L. Meng, J. Hwang, H. Zhao, “Band offsets at metalorganic chemical vapor deposited β-(Al_xGa_1−x)₂O₃/β-Ga₂O₃ interfaces - Crystalline orientation dependence”, Journal of Vacuum Science & Technology A 39, 063207 (2021).
• [J20] A. Bhuiyan, Z. Feng, H.-L. Huang, L. Meng, J. Hwang, H. Zhao, “Metalorganic chemical vapor deposition of α-Ga₂O₃ and α-(Al_xGa_1−x)₂O₃ thin films on m-plane sapphire substrates”, APL Materials 9, 101109 (2021).
• [J19] N. K. Kalarickal, A. Fiedler, S. Dhara, H.-L. Huang, A. Bhuiyan, M. W. Rahman, T. Kim, Z. Xia, Z. J. Eddine, A. Dheenan, M. Brenner, H. Zhao, J. Hwang, S. Rajan, “Planar and three-dimensional damage-free etching of β-Ga₂O₃ using atomic gallium flux”, Applied Physics Letters 119, 123503 (2021).
• [J18] (Invited Featured Paper) A. Bhuiyan, Z. Feng, L. Meng, H. Zhao, “MOCVD growth of (010) β-(Al_xGa_1−x)₂O₃ thin films”, Journal of Materials Research 36, 4804 (2021).
• [J17] (Featured Article) Y. Zheng, Z. Feng, A. Bhuiyan, L. Meng, S. Dhole, Q. Jia, H. Zhao, J.-H. Seo, “Large-Size Free-Standing Single-crystal β-Ga₂O₃ Membranes Fabricated by Hydrogen Implantation and Lift-Off”, Journal of Materials Chemistry C 9, 6180 (2021). 2021 Journal of Materials Chemistry C HOT Papers
• [J16] A. Bhuiyan, S. Subrina, “Asymmetric Channel Junctionless Field-Effect Transistors: a MOS Structure Biosensor”, Silicon 14, 2489 (2021).
• [J15] (Featured Article) J. M. Johnson, H.-L. Huang, M. Wang, S. Mu, J. B. Varley, A. F. M. A. U. Bhuiyan, Z. Feng, N. K. Kalarickal, S. Rajan, H. Zhao, C. G. Van de Walle, J. Hwang, “Atomic Scale Investigation of Aluminum Incorporation, Defects, and Phase Stability in β-(Al_xGa_1-x)₂O₃ Films”, APL Materials 9, 051103 (2021).

• [J14] (Editor’s Pick) A. Bhuiyan, Z. Feng, J. M. Johnson, H.-L. Huang, J. Hwang, H. Zhao, “Band Offsets of (100) β-(Al_xGa_1−x)₂O₃/β-Ga₂O₃ Heterointerfaces Grown via MOCVD”, Applied Physics Letters 117, 252105 (2020).
• [J13] Z. Feng, A. Bhuiyan, N. K. Kalarickal, S. Rajan, H. Zhao, “Mg acceptor doping in MOCVD (010) β-Ga₂O₃”, Applied Physics Letters 117, 222106 (2020).
• [J12] (Editor’s Pick) H. Ghadi, J. F. McGlone, Z. Feng, A. Bhuiyan, H. Zhao, A. R. Arehart, S. A. Ringel, “Influence of growth temperature on defect states throughout the bandgap of MOCVD-grown β-Ga₂O₃”, Applied Physics Letters 117, 172106 (2020).
• [J11] (Editor’s Pick) A. Bhuiyan, Z. Feng, J. M. Johnson, H.-L. Huang, J. Hwang, H. Zhao, “MOCVD growth of β-phase (Al_xGa_1−x)₂O₃ on (−201) β-Ga₂O₃ substrates”, Applied Physics Letters 117, 142107 (2020).
• [J10] J. Sarker, A. Bhuiyan, Z. Feng, H. Zhao, B. Mazumder, “Direct observation of site-specific dopant substitution in Si doped (Al_xGa_1-x)₂O₃ via Atom Probe Tomography”, Journal of Physics D: Applied Physics 54, 184001 (2021).
• [J9] N. K. Kalarickal, Z. Feng, A. Bhuiyan, Z. Xia, J. McGlone, W. Moore, A. R. Arehart, S. A. Ringel, H. Zhao, S. Rajan, “Electrostatic Engineering Using Extreme Permittivity Materials for Ultra-Wide Bandgap Semiconductor Transistors”, IEEE Transactions on Electron Devices 68(1), 29 (2020).
• [J8] A. Bhuiyan, Z. Feng, J. M. Johnson, H.-L. Huang, J. Hwang, H. Zhao, “MOCVD epitaxy of ultra-wide bandgap β-(Al_xGa_1−x)₂O₃ with high-Al composition on (100) β-Ga₂O₃ substrates”, Crystal Growth & Design 20, 6722 (2020).
• [J7] A. Bhuiyan, Z. Feng, J. M. Johnson, H.-L. Huang, J. Sarker, M. Zhu, M. R. Karim, B. Mazumder, J. Hwang, H. Zhao, “Response to Comment on ‘Phase Transformation in MOCVD Growth of (Al_xGa_1−x)₂O₃ Thin Films’”, APL Materials 8, 089102 (2020).
• [J6] Z. Feng, A. Bhuiyan, Z. Xia, W. Moore, Z. Chen, J. F. McGlone, D. R. Daughton, A. R. Arehart, S. A. Ringel, S. Rajan, H. Zhao, “Probing charge transport and background doping in MOCVD grown (010) β-Ga₂O₃”, Physica Status Solidi RRL 14(8), 2000145 (2020).
• [J5] J. Sarker, S. Broderick, A. Bhuiyan, Z. Feng, H. Zhao, B. Mazumder, “A combined approach of Atom Probe Tomography and unsupervised machine learning to understand phase transformation in (Al_xGa_1-x)₂O₃”, Applied Physics Letters 116, 152101 (2020).
• [J4] A. Bhuiyan, Z. Feng, J. M. Johnson, H.-L. Huang, J. Sarker, M. Zhu, M. R. Karim, B. Mazumder, J. Hwang, H. Zhao, “Phase Transformation in MOCVD Growth of (Al_xGa_1−x)₂O₃ Thin Films”, APL Materials 8, 031104 (2020). Most Cited Articles from 2020 and 2021 in APL Materials – View Listing.
• [J3] H. Ghadi, J. F. McGlone, C. M. Jackson, E. Farzana, Z. Feng, A. Bhuiyan, H. Zhao, A. R. Arehart, S. A. Ringel, “Full bandgap defect state characterization of β-Ga₂O₃ grown by metal organic chemical vapor deposition”, APL Materials 8, 021111 (2020).

• [J2] (Editor’s Pick) A. Bhuiyan, Z. Feng, J. M. Johnson, Z. Chen, H.-L. Huang, J. Hwang, H. Zhao, “MOCVD epitaxy of β-(Al_xGa_1-x)₂O₃ thin films on (010) Ga₂O₃ substrates and N-type doping”, Applied Physics Letters 115, 120602 (2019). Most Read Editor’s Pick in 2019
• [J1] (Featured Article) Z. Feng, A. Bhuiyan, M. R. Karim, H. Zhao, “MOCVD homoepitaxy of Si-doped (010) β-Ga₂O₃ thin films with superior transport properties”, Applied Physics Letters 114, 250601 (2019). Highlighted in Scilight 2019 – View Scilight, Most Read Scilights from 2018–2019 – See List.

• [C62] (Invited Talk) A. Bhuiyan, “Ga₂O₃ Power Electronics: CVD Growth, Plasma-Free Etching, Devices, and Diamond Integration”, 2025 Northeast Power Electronics Symposium (NEPES), Mansfield, CT, Nov. 13–14, 2025.
• [C61] S. A. Khan, S. Saha, Ahmed Ibreljic, U. Singisett, A. Bhuiyan, “Radiation Impacts on Ga₂O₃ Devices”, 2025 Northeast Power Electronics Symposium (NEPES), Mansfield, CT, Nov. 13–14, 2025. (Poster Presentation)
• [C60] A. Ibreljic, S. Khan, I. Isah, S. Lam, A. Bhuiyan, “Low-Pressure CVD of β-Ga₂O₃ Films and Devices”, 2025 Northeast Power Electronics Symposium (NEPES), Mansfield, CT, Nov. 13–14, 2025. (Poster Presentation)
• [C59] (Invited Talk) A. Bhuiyan, “Advancing Ultrawide-Bandgap Gallium Oxide Semiconductor for High-Power and Radiation-Hardened Electronics”, 77th Anniversary of IEEE NAECON, Dayton, OH, July 28–31, 2025.
• [C58] S. Khan, A. Ibreljic, A. Bhuiyan, “Si-Doped β-Ga₂O₃ Films Grown by LPCVD with Controlled Doping, Promising Mobility and High Growth Rates”, 8th United States Gallium Oxide Workshop (GOX2025), Aug. 4–6, 2025, Salt Lake City, Utah.
• [C57] A. Ibreljic, S. Khan, I. Isah, S. Lam, A. Bhuiyan, “Low-Pressure CVD of Sn- and Ge-Doped β-Ga₂O₃: Tunable Doping, Promising Mobility, Schottky Diodes, and Insights from DFT”, 8th United States Gallium Oxide Workshop (GOX2025), Aug. 4–6, 2025, Salt Lake City, Utah. (Poster Presentation)
• [C56] (Invited Talk) A. Bhuiyan, S. A. Khan, A. Ibreljic, S. Margiotta, “LPCVD Grown β-Ga₂O₃ and Radiation-Hardened Devices for Extreme Environment Power Applications”, 247th ECS Meeting, Montréal, Canada, May 18–22, 2025.

• [C55] S. A. Khan, S. Saha, U. Singisetti, A. Bhuiyan, “Radiation Resilience of β-Ga₂O₃ Schottky Barrier Diodes Under High Gamma Doses”, 7th United States Gallium Oxide Workshop (GOX-2024), August 2024, Columbus, Ohio.
• [C54] S. A. Khan, S. Margiotta, A. Bhuiyan, “Polycrystalline Diamond Growth on (010) β-Ga₂O₃ for Scalable and Cost-Efficient Thermal Management”, 7th United States Gallium Oxide Workshop (GOX-2024), August 2024, Columbus, Ohio. (Poster Presentation)
• [C53] (Invited Talk) A. Bhuiyan, S. Margiotta, S. A. Khan, “Development of Single Crystal NbN Superconductor on Wide Bandgap GaN By Sputtering and Thermal Annealing”, 245th ECS Meeting, San Francisco, CA, May 26–30, 2024.
• [C52] S. Margiotta, S. A. Khan, A. Bhuiyan, “Annealing Modulated Structural and Electrical Properties of Crystalline NbN Superconductor on GaN substrate by Sputter Deposition”, EMC, June 2024, College Park, Maryland.
• [C51] S. A. Khan, S. Saha, U. Singisetti, A. Bhuiyan, “Systematic Investigation of Electrical Performance of β-Ga₂O₃ Schottky Barrier Diodes under High-Dose Gamma Irradiation”, EMC, June 2024, College Park, Maryland.
• [C50] S. A. Khan, S. Margiotta, A. Bhuiyan, “MPCVD Growth of Polycrystalline Diamond on (010) β-Ga₂O₃ for Thermal Management”, EMC, June 2024, College Park, Maryland.

• [C49] (Best Oral Presentation Award Finalist) A. Bhuiyan, L. Meng, H.-L. Huang, C. Chae, J. Hwang, H. Zhao, “Pushing the Al composition limit up to 99% in MOCVD β-(Al_xGa_1-x)₂O₃ films using TMGa as Ga precursor”, 6th United States Gallium Oxide Workshop (GOX-2023), August 2023, Buffalo, New York.
• [C48] L. Meng, A. Bhuiyan, H. Zhao, “The role of Carbon and C-H neutralization in MOCVD β-Ga₂O₃ using TMGa as precursor”, 6th United States Gallium Oxide Workshop (GOX-2023), August 2023, Buffalo, New York.
• [C47] K. Zhang, L. Meng, H.-L. Huang, J. Sarker, A. Bhuiyan, B. Mazumder, J. Hwang, H. Zhao, “Low-pressure chemical vapor deposition of ultrawide bandgap LiGa₅O₈ thin films”, 6th United States Gallium Oxide Workshop (GOX-2023), August 2023, Buffalo, New York.
• [C46] (Best Student Presentation Award) C. N. Saha, A. Vaidya, A. Bhuiyan, L. Meng, H. Zhao, U. Singisetti, “Highly Scaled β-Ga₂O₃ thin channel MOSFET with 5.12 MV/cm average breakdown field and enhanced RF performance”, 6th United States Gallium Oxide Workshop (GOX-2023), August 2023, Buffalo, New York.
• [C45] Z. Ren, H.-C. Huang, H. Lee, C. Chan, H. C. Roberts, X. Wu, A. Waseem, A. Bhuiyan, H. Zhao, W. Zhu, X. Li, “Temperature Dependent Characteristics of Lateral β-Ga₂O₃ Fin-MOSFETs by MacEtch”, DRC-2023, Santa Barbara, California.

• [C44] A. Bhuiyan, L. Meng, H.-L. Huang, J. Sarkar, M. Zhu, B. Mazumder, J. Hwang, H. Zhao, “MOCVD epitaxial development of differently oriented β-(Al_xGa_1-x)₂O₃ films with fast growth rates and Al composition up to 63%”, IWGO-4, October 2022, Nagano, Japan.
• [C43] H.-L. Huang, C. Chae, A. Bhuiyan, L. Meng, H. Zhao, J. Hwang, “Atomic Scale Investigation of ε-Ga₂O₃ Heteroepitaxy”, IWGO-4, October 2022, Nagano, Japan.
• [C42] E. Kluth, A. Bhuiyan, H. Zhao, R. Goldhahn, M. Feneberg, “Anisotropic IR active phonon modes and first direct band-to-band transition in α-(Al_xGa_1-x)₂O₃ alloys grown by MOCVD”, IWGO-4, October 2022, Nagano, Japan.
• [C41] H. Zhao, A. Bhuiyan, Z. Feng, L. Meng, “MOCVD development of Ga₂O₃ and AlGaO thin films”, 242nd ECS meeting (digital presentation), October 9–13, 2022, Atlanta, GA.
• [C40] J. Sarker, A. Bhuiyan, Z. Feng, L. Meng, H. Zhao, B. Mazumder, “Microscopic and Spectroscopic Analysis of (100), (−201) and (010) (Al_xGa_1-x)₂O₃ Films Using Atom Probe Tomography”, GOX 2022, August 2022, Washington, D.C.
• [C39] S. Saha, L. Meng, A. Bhuiyan, Z. Feng, H. Zhao, U. Singisetti, “Electrical Characteristics of in situ Mg-Doped Ga₂O₃ Current Blocking Layer for Vertical Devices”, GOX 2022, August 2022, Washington, D.C.
• [C38] A. Sharma, Z. Feng, L. Meng, A. Bhuiyan, H. Zhao, U. Singisetti, “Comparison of lateral field-plated MOSFETs with and without Mg-doped buffer layer in MOCVD grown β-Ga₂O₃”, DRC, June 2022, Columbus, Ohio.
• [C37] H.-C. Huang, Z. Ren, A. Bhuiyan, Z. Feng, Z. Yang, X. Luo, A. Q. Huang, H. Zhao, Xiuling Li, “β-Ga₂O₃ FinFETs by MacEtch: high aspect ratio and ultra-low hysteresis”, DRC, June 2022, Columbus, Ohio.
• [C36] K. Zhang, C. Hu, A. Bhuiyan, M. Zhu, V. G. T. Vangipuram, M. R. Karim, B. H. Jayatunga, J. Hwang, K. Kash, H. Zhao, “Pulsed-Mode MOCVD Growth of ZnSn(Ga)N₂ and Determination of the Valence Band Offset with GaN”, EMC, June 2022, Columbus, Ohio.
• [C35] L. Meng, Z. Feng, A. Bhuiyan, H.-L. Huang, J. Hwang, H. Zhao, “MOCVD Epitaxy of β-Ga₂O₃ Thin Films on (100) β-Ga₂O₃ Substrate”, EMC, June 2022, Columbus, Ohio.
• [C34] A. Bhuiyan, Z. Feng, L. Meng, H.-L. Huang, J. Hwang, H. Zhao, “MOCVD Development and Bandoffsets of ε-Ga₂O₃ on GaN, AlN, YSZ and c-Sapphire Substrates”, EMC, June 2022, Columbus, Ohio.
• [C33] A. Bhuiyan, Z. Feng, L. Meng, A. Fiedler, H.-L. Huang, A. T. Neal, E. Steinbrunner, S. Mou, J. Hwang, S. Rajan, H. Zhao, “MOCVD growth of Si Doped (010) β-(Al_xGa_1-x)₂O₃ Films - Structural and Electrical Properties”, EMC, June 2022, Columbus, Ohio.
• [C32] A. Bhuiyan, Z. Feng, H.-L. Huang, L. Meng, J. Hwang, H. Zhao, “MOCVD Epitaxy of α-(Al_xGa_1-x)₂O₃ (x = 0–100%) on m-Plane Sapphire Substrate”, Compound Semiconductor Week, June 2022, Ann Arbor, Michigan.
• [C31] A. Bhuiyan, L. Meng, Z. Feng, H.-L. Huang, J. Hwang, H. Zhao, “In Situ MOCVD Growth of Dielectric Al₂O₃ on β-(Al_xGa_1-x)₂O₃: Interfaces and Band Offsets”, 2022 MRS Spring Meeting, May 2022, Honolulu, Hawaii.
• [C30] H. Zhao, A. Bhuiyan, L. Meng, Z. Feng, “Status of MOCVD Development of UWBG Ga₂O₃, AlGaO and Heterostructures”, 2022 MRS Spring Meeting, May 2022, Honolulu, Hawaii.
• [C29] X. Li, H.-C. Huang, Z. Ren, A. Bhuiyan, Z. Feng, A. Green, K. Chabak, H. Zhao, “High Aspect Ratio β-Ga₂O₃ FinFETs with Near-Zero Hysteresis and Low On-Resistance by Metal-Assisted Chemical Etching”, 2022 MRS Spring Meeting, May 2022, Honolulu, Hawaii.

• [C28] A. Bhuiyan, Z. Feng, J. Johnson, H.-L. Huang, J. Hwang, H. Zhao, “MOCVD Epitaxy of β-(Al_xGa_1−x)₂O₃ Films on (100) and (−201) β-Ga₂O₃ Substrates with Al Compositions up to 52%”, 2021 MRS Spring Meeting, April 2021. (Virtual)
• [C27] Z. Feng, A. Bhuiyan, N. Kalarickal, S. Rajan, H. Zhao, “Mg Acceptor Doping in MOCVD (010) β-Ga₂O₃”, 2021 MRS Spring Meeting, April 2021. (Virtual)
• [C26] S. Ringel, H. J. Ghadi, J. McGlone, R. Adams, A. Arehart, Z. Feng, A. Bhuiyan, Y. Zhang, H. Zhao, Z. Xia, N. K. Kalarickal, S. Rajan, “Current Status of Deep Level Defects in β-Ga₂O₃”, 2021 MRS Spring Meeting, April 2021. (Virtual)
• [C25] J. Shi, A. Krishnan, A. Bhuiyan, Y. R. Koh, K. Huynh, A. Mauze, S. Mu, B. M. Foley, H. Ahmad, T. Itoh, Y. Zhang, C. Yuan, S. Kim, W. A. Doolittle, C. G. Van de Walle, J. S. Speck, M. Goorsky, P. Hopkins, H. Zhao, S. Graham, “Thermal Transport Across Al-(Al_xGa_1-x)₂O₃ and Al-Ga₂O₃ Interfaces”, International Electronic Packaging Technical Conference and Exhibition, Oct. 2021.
• [C24] H. Zhao, Y. Zhang, Z. Feng, A. Bhuiyan, L. Meng, K. Zhang, M. R. Karim, “Developments of WBG GaN-on-GaN Vertical Power Devices and UWBG Ga₂O₃, AlGaO, and Heterostructures”, ECS Meeting Abstracts, Oct. 2021. (Virtual)
• [C23] H. Ghadi, J. F. McGlone, Z. Feng, A. Bhuiyan, Y. Zhang, H. Zhao, A. Armstrong, G. R. Burns, G. Vizkelethy, E. Bielejec, A. R. Arehart, S. A. Ringel, “Detailed investigation of MOCVD-grown β-Ga₂O₃ through quantitative defect spectroscopies”, Oxide-based Materials and Devices XII 11687, 116870T (2021).
• [C22] H.-L. Huang, J. Johnson, C. Chae, A. Bhuiyan, Z. Feng, N. K. Kalarickal, S. Rajan, H. Zhao, J. Hwang, “Point Defects and Alloy Incorporation in Ultrawide Bandgap β-(Al_xGa_1-x)₂O₃ Films”, Microscopy and Microanalysis 27(S1), 2140–2142 (2021).
• [C21] N. K. Kalarickal, A. Dheenan, Z. Feng, A. Bhuiyan, A. Fiedler, J. F. McGlone, S. Dhara, S. A. Ringel, H. Zhao, S. Rajan, “Demonstration of MOCVD-grown β-Ga₂O₃ MESFETs with Insulating Mg-Doped Buffer Layers”, DRC, June 2021. (Virtual)
• [C20] Z. Feng, A. Bhuiyan, L. Meng, H. Zhao, “Expanding Growth Window for MOCVD β-Ga₂O₃”, EMC, June 2021. (Virtual)
• [C19] (Best Student Presentation Award) A. Bhuiyan, Z. Feng, L. Meng, J. Johnson, H.-L. Huang, J. Hwang, H. Zhao, “Orientation-Dependent Band Offsets at MOCVD Grown β-(Al_xGa_1–x)₂O₃/β-Ga₂O₃ Heterointerfaces”, EMC, June 2021. (Virtual)
• [C18] E. M. Cornuelle, H. J. Ghadi, J. F. McGlone, A. Bhuiyan, Z. Feng, H. Zhao, A. Arehart, S. A. Ringel, “Quantitative Defect Characterization of MOCVD Grown β-(Al,Ga)2O3 and Comparison with β-Ga₂O₃”, EMC, June 2021. (Virtual)
• [C17] H.-L. Huang, J. Johnson, A. Bhuiyan, Z. Feng, N. K. Kalarickal, S. Rajan, “Atomic Scale Investigation of Aluminum Incorporation, Defects and Phase Stability in β-(Al_xGa_1-x)₂O₃ Films”, EMC, June 2021. (Virtual)
• [C16] A. Fiedler, Z. Feng, A. Bhuiyan, N. K. Kalarickal, S. Dhara, A. Dheenan, H. Zhao, S. Rajan, “Growth and Characterization of Deep Acceptor Mg-Doped/N-Type β-Ga₂O₃ Junctions”, EMC, June 2021. (Virtual)

• [C15] H.-C. Huang, J. Michaels, C. Chan, A. Bhuiyan, Z. Feng, H. Zhao, X. Li, “MacEtch of β-Ga₂O₃, SiC and GaN — Plasma-Damage-Free and High-Aspect-Ratio”, MRS Spring Meeting, Nov. 2020. (Virtual)
• [C14] J. Sarker, A. Bhuiyan, Z. Feng, H. Zhao, B. Mazumder, “Data mining for structural and chemical evolution of (Al_xGa_1-x)₂O₃ using Atom Probe Tomography”, MRS Spring Meeting, Nov. 2020. (Virtual)
• [C13] A. Bhuiyan, Z. Feng, J. M. Johnson, Z. Chen, H.-L. Huang, J. Hwang, H. Zhao, “MOCVD growth and characterizations of β-(Al_xGa_1−x)₂O₃ thin films and N-type doping”, MRS Spring Meeting, Nov. 2020. (Virtual)
• [C12] Z. Feng, A. Bhuiyan, M. R. Karim, Y. Zhang, H. Zhao, “MOCVD Epitaxy of β-Ga₂O₃ Thin Films with Record Mobilities”, 2020 MRS Spring Meeting, Nov. 2020. (Virtual)
• [C11] N. K. Kalarickal, Z. Feng, Z. Xia, A. Bhuiyan, W. Moore, J. F. McGlone, A. Arehart, S. A. Ringel, H. Zhao, S. Rajan, “β-Ga₂O₃/BaTiO₃ MESFET with Power Figure of Merit of 376 MW/cm²”, EMC, June 2020. (Virtual)
• [C10] H.-L. Huang, J. Johnson, A. Bhuiyan, Z. Feng, H. Zhao, J. Hwang, “Atomic Distribution of Al and Phase Transformation in β-(Al_xGa_1-x)₂O₃”, EMC, June 2020. (Virtual)
• [C9] J. F. McGlone, H. J. Ghadi, Z. Feng, A. Bhuiyan, H. Zhao, A. Arehart, S. A. Ringel, “Proton Radiation Effects on Electronic Defect States in High-Mobility MOCVD-Grown (010) β-Ga₂O₃”, EMC, June 2020. (Virtual)
• [C8] H. J. Ghadi, J. F. McGlone, R. Adams, Z. Feng, A. Bhuiyan, H. Zhao, A. Arehart, “Growth Temperature Dependence of Electronic Defect States in High-Mobility MOCVD-Grown (010) β-Ga₂O₃”, EMC, June 2020. (Virtual)
• [C7] Z. Feng, A. Bhuiyan, Z. Xia, J. E. McGlone, D. R. Daughton, A. R. Arehart, S. A. Ringel, S. Rajan, H. Zhao, “Probing Charge Transport and Background Doping in MOCVD Grown (010) β-Ga₂O₃”, EMC, June 2020. (Virtual)
• [C6] A. Bhuiyan, Z. Feng, J. Johnson, H.-L. Huang, J. Sarker, M. Zhu, M. R. Karim, B. Mazumder, J. Hwang, H. Zhao, “MOCVD Growth, Characterization and Phase Transformation of (Al_xGa_1−x)₂O₃ Thin Films”, EMC, June 2020. (Virtual)
• [C5] J. Sarker, A. Bhuiyan, Z. Feng, H. Zhao, B. Mazumder, “Atom Probe Tomography Studies to Understand Dopant Interaction in Si-Doped (Al_xGa_1-x)₂O₃”, EMC, June 2020. (Virtual)

• [C4] Z. Xia, W. Moore, A. Bhuiyan, Z. Feng, C. Wang, H. Chandrasekar, A. Lee, N. K. Kalarickal, F. Yang, H. Zhao, S. Rajan, “Metal/BaTiO₃/β-Ga₂O₃ Dielectric Heterojunction Diode with 5.7 MV/cm Breakdown Field”, IWGO, Columbus, OH, Aug. 2019.
• [C3] (Best Paper Award) Z. Feng, A. Bhuiyan, M. Karim, H. Zhao, “MOCVD Epitaxy of Si-doped β-Ga₂O₃ Thin Films with Record High Electron Mobilities”, IWGO, Columbus, OH, Aug. 2019.
• [C2] A. Bhuiyan, Z. Feng, Z. Chen, J. Johnson, H.-L. Huang, J. Hwang, H. Zhao, “MOCVD Growth of β-(Al_xGa_1−x)₂O₃ Thin Films on Ga₂O₃ Substrates”, IWGO 2019, Columbus, OH, Aug. 2019.
• [C1] Y. Zhang, Z. Feng, A. Bhuiyan, M. Karim, H. Zhao, “High temperature LPCVD growth of β-Ga₂O₃ films”, IWGO 2019, Columbus, OH, Aug. 2019.