Bhuiyan Research Group

Facilities

(Ultra)Wide Bandgap Semiconductor Research Laboratory (Bhuiyan lab) is located at UML North campus at Ball Hall 308. At campus, we have access to state-of-the-art facilities and equipment, both dedicated and shared, to perform cutting edge research on semiconductor materials and devices.

Materials Growth:

Low-Pressure Chemical Vapor Deposition (LPCVD) system at Ball Hall 308 (Bhuiyan Laboratory) for the growth of (ultra)wide bandgap materials such as Ga2O3 thin films, alloys and heterostructures.

Materials Characterization:

Nanofabrication:

UML Nanofabrication Lab: The Nanofabrication Lab at UML North campus features a state-of-the-art, 4,200 ft2 Class 100 clean room equipped with over 40 pieces of process and analytical instrumentation for complex research projects that require micro and nano scale fabrication.
Cambridge Nanofabrication lab at Harvard Center for Nanoscale Systems (CNS): Harvard Nanofabrication lab features a 10,500 sq ft cleanroom with state-of-the-art instruments to support extensive range of fabrication and processing techniques, enabling a vast array of device structures from novel materials.

Electrical Characterization:

Temperature dependent Hall effect measurement system (77K – 350K) (Bhuiyan Lab at Ball Hall 308)
Keithley 4200A-SCS Semiconductor Parameter Analyzer at Falmouth annex 207B.
Probe station for I-V and C-V characterization (25 °C – 250 °C) at Falmouth annex 207B.

Radiation Laboratory:

Radiation Laboratory at UML North campus offers wide range of research capabilities in developing novel detectors for neutrons and gamma rays, simulating radiation conditions of hostile space environments, non-destructive testing and analysis, investigating radiation induced modifications of materials and developing radiation resistant electronics and optoelectronics using-

o Gamma Facilities

o Neutron Facilities

o Proton Facilities

Research Centers:

Resources

Facilities